Effects of end-of-range dislocation loops on transient enhanced diffusion of indum implanted in silicon

Authors=NODA T., ODANAKA S., UMIMOTO H.

Journal/Book_names=Journal of Applied Physics

volume=88

number=9

pages=4980-4984

Publish_year=2000

Publish_Country=USA

Publisher=American Institute of Physics

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00218979

ID=200009371