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Effects of end-of-range dislocation loops on transient enhanced diffusion of indum implanted in silicon
NODA T., ODANAKA S., UMIMOTO H.
itemdescription
TitleEffects of end-of-range dislocation loops on transient enhanced diffusion of indum implanted in silicon
AuthorsNODA T., ODANAKA S., UMIMOTO H.
Data nameJournal of Applied Physics
Volume88
Num9
Page4980-4984
Year2000
PublisherAmerican Institute of Physics
LanguageEN
Abstract languageEN
ISSN00218979
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=200009371
@idhttps://gbank.gsj.jp/ld/resource/geolis/200009371