Characterization of Si nanocrystals grown by annealing SiO2 films with uniform concentrations of implanted Si

Authors=GUHA S., QADRI S.B., MUSKET R.G., WALL M.A., SHIMIZU-IWAYAMA Tsutomu

Journal/Book_names=Journal of Applied Physics

volume=88

number=7

pages=3954-3961

Publish_year=2000

Publish_Country=USA

Publisher=American Institute of Physics

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00218979

ID=200008722