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Characterization of Si nanocrystals grown by annealing SiO2 films with uniform concentrations of implanted Si
GUHA S., QADRI S.B., MUSKET R.G., WALL M.A., SHIMIZU-IWAYAMA Tsutomu
itemdescription
TitleCharacterization of Si nanocrystals grown by annealing SiO2 films with uniform concentrations of implanted Si
AuthorsGUHA S., QADRI S.B., MUSKET R.G., WALL M.A., SHIMIZU-IWAYAMA Tsutomu
Data nameJournal of Applied Physics
Volume88
Num7
Page3954-3961
Year2000
PublisherAmerican Institute of Physics
LanguageEN
Abstract languageEN
ISSN00218979
@idhttps://gbank.gsj.jp/ld/resource/geolis/200008722