GeAs as a novel arsenic dimer source for eta-type doping of Ge grown by molecular beam epitaxy

Authors=KAWANAKA M., IGUCHI N., FURUKAWA A., BABA T.

Journal/Book_names=Journal of Applied Physics

volume=74

number=6

pages=3886-3889

Publish_year=1993

Publish_Country=USA

Publisher=American Institute of Physics

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00218979

ID=199302659