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GeAs as a novel arsenic dimer source for eta-type doping of Ge grown by molecular beam epitaxy
KAWANAKA M., IGUCHI N., FURUKAWA A., BABA T.
itemdescription
TitleGeAs as a novel arsenic dimer source for eta-type doping of Ge grown by molecular beam epitaxy
AuthorsKAWANAKA M., IGUCHI N., FURUKAWA A., BABA T.
Data nameJournal of Applied Physics
Volume74
Num6
Page3886-3889
Year1993
PublisherAmerican Institute of Physics
LanguageEN
Abstract languageEN
ISSN00218979
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199302659
@idhttps://gbank.gsj.jp/ld/resource/geolis/199302659