Bias dependence of Schottky barrier height in GaAs from internal photoemission and current-voltage characteristics

Authors=ISHIDA Toshiki, IKOMA Hideaki

Journal/Book_names=Journal of Applied Physics

volume=74

number=6

pages=3977-3958

Publish_year=1993

Publish_Country=USA

Publisher=American Institute of Physics

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00218979

ID=199301867