Geological Literature Search (GEOLIS) (Geological Survey of Japan / AIST)

Electrical characteristics dependence on aluminum mole fraction in (Al0.5Ga0.5)Sb/InAs/(AlXGa1-X)Sb heterostructure

Authors=YOH Kanji, MORIUCHI Toshiaki, YANO Mitsuaki, INOUE Masataka

Journal/Book_names=Journal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy

volume=111

number=1-4

pages=643-646

Publish_year=1991

Publish_Country=NLD

Publisher=North-Holland

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00220248

DOI=10.1016/0022-0248(91)91056-G

ID=199108579

@id=https://gbank.gsj.jp/ld/resource/geolis/199108579