Geological Literature Search (GEOLIS) (Geological Survey of Japan / AIST)

p+/N GaAs-AlGaAs heterostructures grown by gas source MBE using gaseous p- and n-type dopant sources

Authors=SANDHU A., FUJII T., ANDO H., TAKAHASHI T., ISHIKAWA H., YOKOYAMA N.

Journal/Book_names=Journal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy

volume=111

number=1-4

pages=559-563

Publish_year=1991

Publish_Country=NLD

Publisher=North-Holland

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00220248

DOI=10.1016/0022-0248(91)91039-D

ID=199105873

@id=https://gbank.gsj.jp/ld/resource/geolis/199105873