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p+/N GaAs-AlGaAs heterostructures grown by gas source MBE using gaseous p- and n-type dopant sources
SANDHU A., FUJII T., ANDO H., TAKAHASHI T., ISHIKAWA H., YOKOYAMA N.
itemdescription
Titlep+/N GaAs-AlGaAs heterostructures grown by gas source MBE using gaseous p- and n-type dopant sources
AuthorsSANDHU A., FUJII T., ANDO H., TAKAHASHI T., ISHIKAWA H., YOKOYAMA N.
Data nameJournal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy
Volume111
Num1-4
Page559-563
Year1991
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199105873
DOI10.1016/0022-0248(91)91039-D
@idhttps://gbank.gsj.jp/ld/resource/geolis/199105873