Geological Literature Search (GEOLIS) (Geological Survey of Japan / AIST)

Characterization of lateral correlation length of interface roughness in MBE grown GaAs/AlAs quantum wells by mobility measurement

Authors=NODA T., TANAKA M., SAKAKI H.

Journal/Book_names=Journal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy

volume=111

number=1-4

pages=348-352

Publish_year=1991

Publish_Country=NLD

Publisher=North-Holland

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00220248

DOI=10.1016/0022-0248(91)90999-L

ID=199104922

@id=https://gbank.gsj.jp/ld/resource/geolis/199104922