Geological Literature
Characterization of lateral correlation length of interface roughness in MBE grown GaAs/AlAs quantum wells by mobility measurement
NODA T., TANAKA M., SAKAKI H.
| item | description |
|---|---|
| Title | Characterization of lateral correlation length of interface roughness in MBE grown GaAs/AlAs quantum wells by mobility measurement |
| Authors | NODA T., TANAKA M., SAKAKI H. |
| Data name | Journal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy |
| Volume | 111 |
| Num | 1-4 |
| Page | 348-352 |
| Year | 1991 |
| Publisher | North-Holland |
| Language | EN |
| Abstract language | EN |
| ISSN | 00220248 |
| DOI | 10.1016/0022-0248(91)90999-L |
| @id | https://gbank.gsj.jp/ld/resource/geolis/199104922 |