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Characterization of lateral correlation length of interface roughness in MBE grown GaAs/AlAs quantum wells by mobility measurement
NODA T., TANAKA M., SAKAKI H.
itemdescription
TitleCharacterization of lateral correlation length of interface roughness in MBE grown GaAs/AlAs quantum wells by mobility measurement
AuthorsNODA T., TANAKA M., SAKAKI H.
Data nameJournal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy
Volume111
Num1-4
Page348-352
Year1991
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199104922
DOI10.1016/0022-0248(91)90999-L
@idhttps://gbank.gsj.jp/ld/resource/geolis/199104922