Geological Literature Search (GEOLIS) (Geological Survey of Japan / AIST)

High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1-xGex heterostructure

Authors=MIYAO Masanobu, MURAKAMI Eiichi, ETOH Hiroyuki, NAKAGAWA Kiyokazu, NISHIDA Akio

Journal/Book_names=Journal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy

volume=111

number=1-4

pages=912-915

Publish_year=1991

Publish_Country=NLD

Publisher=North-Holland

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00220248

DOI=10.1016/0022-0248(91)91106-K

ID=199104053

@id=https://gbank.gsj.jp/ld/resource/geolis/199104053