Geological Literature
High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1-xGex heterostructure
MIYAO Masanobu, MURAKAMI Eiichi, ETOH Hiroyuki, NAKAGAWA Kiyokazu, NISHIDA Akio
| item | description |
|---|---|
| Title | High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1-xGex heterostructure |
| Authors | MIYAO Masanobu, MURAKAMI Eiichi, ETOH Hiroyuki, NAKAGAWA Kiyokazu, NISHIDA Akio |
| Data name | Journal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy |
| Volume | 111 |
| Num | 1-4 |
| Page | 912-915 |
| Year | 1991 |
| Publisher | North-Holland |
| Language | EN |
| Abstract language | EN |
| ISSN | 00220248 |
| GEOLIS URL | https://darc.gsj.jp/archives/detail?cls=geolis&pkey=199104053 |
| DOI | 10.1016/0022-0248(91)91106-K |
| @id | https://gbank.gsj.jp/ld/resource/geolis/199104053 |