Geological Literature Search (GEOLIS) (Geological Survey of Japan / AIST)

GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic preciputatus

Authors=MELLOCH M.R., MAHALINGAM K., OTSUKA N., WOODALL J.M., WARREN A.C.

Journal/Book_names=Journal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy

volume=111

number=1-4

pages=39-42

Publish_year=1991

Publish_Country=NLD

Publisher=North-Holland

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00220248

DOI=10.1016/0022-0248(91)90943-Y

ID=199103867

@id=https://gbank.gsj.jp/ld/resource/geolis/199103867