Geological Literature
GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic preciputatus
MELLOCH M.R., MAHALINGAM K., OTSUKA N., WOODALL J.M., WARREN A.C.
| item | description |
|---|---|
| Title | GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic preciputatus |
| Authors | MELLOCH M.R., MAHALINGAM K., OTSUKA N., WOODALL J.M., WARREN A.C. |
| Data name | Journal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy |
| Volume | 111 |
| Num | 1-4 |
| Page | 39-42 |
| Year | 1991 |
| Publisher | North-Holland |
| Language | EN |
| Abstract language | EN |
| ISSN | 00220248 |
| GEOLIS URL | https://darc.gsj.jp/archives/detail?cls=geolis&pkey=199103867 |
| DOI | 10.1016/0022-0248(91)90943-Y |
| @id | https://gbank.gsj.jp/ld/resource/geolis/199103867 |