Geological Literature Search (GEOLIS) (Geological Survey of Japan / AIST)

Electrical properties and dopant incorporation mechanisms of Si doped GaAs and (AlGa)As grown on (111)A GaAs surfaces by MBE

Authors=KADOYA Y., SATO A., KANO H., SAKAKI H.

Journal/Book_names=Journal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy

volume=111

number=1-4

pages=280-283

Publish_year=1991

Publish_Country=NLD

Publisher=North-Holland

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00220248

DOI=10.1016/0022-0248(91)90985-E

ID=199102049

@id=https://gbank.gsj.jp/ld/resource/geolis/199102049