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Electrical properties and dopant incorporation mechanisms of Si doped GaAs and (AlGa)As grown on (111)A GaAs surfaces by MBE
KADOYA Y., SATO A., KANO H., SAKAKI H.
itemdescription
TitleElectrical properties and dopant incorporation mechanisms of Si doped GaAs and (AlGa)As grown on (111)A GaAs surfaces by MBE
AuthorsKADOYA Y., SATO A., KANO H., SAKAKI H.
Data nameJournal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy
Volume111
Num1-4
Page280-283
Year1991
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199102049
DOI10.1016/0022-0248(91)90985-E
@idhttps://gbank.gsj.jp/ld/resource/geolis/199102049