Geological Literature Search (GEOLIS) (Geological Survey of Japan / AIST)

A New GaAs on Si Structure Using AlAs Buffer Layers Grown by Atomic Layer Epitaxy

Authors=OHTSUKA N., KITAHARA K., OZEKI M., KODAMA K.

Journal/Book_names=Journal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth

volume=99

number=1-4

pages=346-351

Publish_year=1990

Publish_Country=NLD

Publisher=North-Holland

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00220248

DOI=10.1016/0022-0248(90)90541-R

ID=199004091

@id=https://gbank.gsj.jp/ld/resource/geolis/199004091