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A New GaAs on Si Structure Using AlAs Buffer Layers Grown by Atomic Layer Epitaxy
OHTSUKA N., KITAHARA K., OZEKI M., KODAMA K.
itemdescription
TitleA New GaAs on Si Structure Using AlAs Buffer Layers Grown by Atomic Layer Epitaxy
AuthorsOHTSUKA N., KITAHARA K., OZEKI M., KODAMA K.
Data nameJournal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth
Volume99
Num1-4
Page346-351
Year1990
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199004091
DOI10.1016/0022-0248(90)90541-R
@idhttps://gbank.gsj.jp/ld/resource/geolis/199004091