Geological Literature
A New GaAs on Si Structure Using AlAs Buffer Layers Grown by Atomic Layer Epitaxy
OHTSUKA N., KITAHARA K., OZEKI M., KODAMA K.
| item | description |
|---|---|
| Title | A New GaAs on Si Structure Using AlAs Buffer Layers Grown by Atomic Layer Epitaxy |
| Authors | OHTSUKA N., KITAHARA K., OZEKI M., KODAMA K. |
| Data name | Journal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth |
| Volume | 99 |
| Num | 1-4 |
| Page | 346-351 |
| Year | 1990 |
| Publisher | North-Holland |
| Language | EN |
| Abstract language | EN |
| ISSN | 00220248 |
| DOI | 10.1016/0022-0248(90)90541-R |
| @id | https://gbank.gsj.jp/ld/resource/geolis/199004091 |