Geological Literature Search (GEOLIS) (Geological Survey of Japan / AIST)

GaAs Single Crystal for 3 Inch Diameter Wafers Grown by Horizontal Zone Melt Technique

Authors=MIZUNIWA S., KASHIWA M., KURIHARA T., NAKAMURA K., OKUBO S., IKEGAMI K.

Journal/Book_names=Journal of Crystal Growth, Crystal Growth 1989, Part 2, Proceedings of the Ninth International Conference on Crystal Growth

volume=99

number=1-4

pages=676-679

Publish_year=1990

Publish_Country=NLD

Publisher=North-Holland

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00220248

DOI=10.1016/S0022-0248(08)80005-X

ID=199003240

@id=https://gbank.gsj.jp/ld/resource/geolis/199003240