Geological Literature
GaAs Single Crystal for 3 Inch Diameter Wafers Grown by Horizontal Zone Melt Technique
MIZUNIWA S., KASHIWA M., KURIHARA T., NAKAMURA K., OKUBO S., IKEGAMI K.
| item | description |
|---|---|
| Title | GaAs Single Crystal for 3 Inch Diameter Wafers Grown by Horizontal Zone Melt Technique |
| Authors | MIZUNIWA S., KASHIWA M., KURIHARA T., NAKAMURA K., OKUBO S., IKEGAMI K. |
| Data name | Journal of Crystal Growth, Crystal Growth 1989, Part 2, Proceedings of the Ninth International Conference on Crystal Growth |
| Volume | 99 |
| Num | 1-4 |
| Page | 676-679 |
| Year | 1990 |
| Publisher | North-Holland |
| Language | EN |
| Abstract language | EN |
| ISSN | 00220248 |
| GEOLIS URL | https://darc.gsj.jp/archives/detail?cls=geolis&pkey=199003240 |
| DOI | 10.1016/S0022-0248(08)80005-X |
| @id | https://gbank.gsj.jp/ld/resource/geolis/199003240 |