Geological Literature Search (GEOLIS) (Geological Survey of Japan / AIST)

Growth Processes in the Initial Stages of Deposition of Ge Films on (100)Si Surfaces by GeH4 Source Molecular Beam Epitaxy

Authors=KOIDE Y., ZAIMA S., OHSHIMA N., YASUDA Y.

Journal/Book_names=Journal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth

volume=99

number=1-4

pages=254-258

Publish_year=1990

Publish_Country=NLD

Publisher=North-Holland

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00220248

DOI=10.1016/0022-0248(90)90522-M

ID=199002370

@id=https://gbank.gsj.jp/ld/resource/geolis/199002370