Geological Literature
Growth Processes in the Initial Stages of Deposition of Ge Films on (100)Si Surfaces by GeH4 Source Molecular Beam Epitaxy
KOIDE Y., ZAIMA S., OHSHIMA N., YASUDA Y.
| item | description |
|---|---|
| Title | Growth Processes in the Initial Stages of Deposition of Ge Films on (100)Si Surfaces by GeH4 Source Molecular Beam Epitaxy |
| Authors | KOIDE Y., ZAIMA S., OHSHIMA N., YASUDA Y. |
| Data name | Journal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth |
| Volume | 99 |
| Num | 1-4 |
| Page | 254-258 |
| Year | 1990 |
| Publisher | North-Holland |
| Language | EN |
| Abstract language | EN |
| ISSN | 00220248 |
| GEOLIS URL | https://darc.gsj.jp/archives/detail?cls=geolis&pkey=199002370 |
| DOI | 10.1016/0022-0248(90)90522-M |
| @id | https://gbank.gsj.jp/ld/resource/geolis/199002370 |