Geological Literature Search (GEOLIS) (Geological Survey of Japan / AIST)

Molecular beam epitaxial grown and properties of highly strained InXGa1-XAs/GaAs multiple quantum wells

Authors=NIKI S., CHANG W.S.C., WIEDER H.H.

Journal/Book_names=Journal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy

volume=111

number=1-4

pages=419-423

Publish_year=1991

Publish_Country=NLD

Publisher=North-Holland

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00220248

DOI=10.1016/0022-0248(91)91012-Y

ID=199104777

@id=https://gbank.gsj.jp/ld/resource/geolis/199104777