Geological Literature Search (GEOLIS) (Geological Survey of Japan / AIST)

Epitaxial Lateral Overgrowths of GaAs on (001) GaAs Substrates by LPE: Growth Behavior and Mechanism

Authors=ZHANG S., NISHINAGA T.

Journal/Book_names=Journal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth

volume=99

number=1-4

pages=292-296

Publish_year=1990

Publish_Country=NLD

Publisher=North-Holland

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00220248

DOI=10.1016/0022-0248(90)90530-X

ID=199006929

@id=https://gbank.gsj.jp/ld/resource/geolis/199006929