Geological Literature Search (GEOLIS) (Geological Survey of Japan / AIST)

Atomic Layer Epitaxial Growth Mechanism of a Gallium Layer on the (100) As Surface of GaAs Crystals in MOVPE

Authors=TSUDA Minoru, OIKAWA Setsuko, MORISHITA Mutsuo, MASHITA Masao

Journal/Book_names=Journal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth

volume=99

number=1-4

pages=545-549

Publish_year=1990

Publish_Country=NLD

Publisher=North-Holland

Language_of_Text=EN

Language_of_Abs=EN

ISSN=00220248

DOI=10.1016/0022-0248(90)90580-E

ID=199006062

@id=https://gbank.gsj.jp/ld/resource/geolis/199006062