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Measurement of light elements in silicon using by secondary ion mass spectrometry 2: Diffusion of carbon and boron implanted into silicon (abs.)
YUTANI M, HIYAGON H., SUGIURA N., HAMANO Y.
itemdescription
TitleMeasurement of light elements in silicon using by secondary ion mass spectrometry 2: Diffusion of carbon and boron implanted into silicon (abs.)
AuthorsYUTANI M, HIYAGON H., SUGIURA N., HAMANO Y.
Data nameAbstracts, Japan Earth and Planetary Science Joint Meeting
Volume1997
Page796-796
Year1997
PublisherSeismological Society of Japan, Volcanological Society of Japan, Geodetic Society of Japan, Geochemical Society of Japan, Japanese Society for Planetary Sciences
LanguageJA
@idhttps://gbank.gsj.jp/ld/resource/geolis/199710378