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Carrier Concentration Dependence of Doping Effects and the Critical Concentration of Metalinsulator Transition in La2-ySryCul-xNixO4
SATO M., FUJISHITA H., SERA M.
itemdescription
TitleCarrier Concentration Dependence of Doping Effects and the Critical Concentration of Metalinsulator Transition in La2-ySryCul-xNixO4
AuthorsSATO M., FUJISHITA H., SERA M.
Data name鉱物における構造,相変化及び物性の動的解析に基づく研究, 文部省科学研究費補助金(ー般研究B)研究成果報告書(課題番号02452070)(平成4年度)
Page129-130
Year1992
Publisher木原 国昭(金沢大学理学部)
LanguageEN
Abstract languageEN
@idhttps://gbank.gsj.jp/ld/resource/geolis/199306119