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Structural stability of ultrathin InAs/GaAs quantum wells grown by migration enhanced epitaxy
YANO Mitsuaki, YOH Kanji, IWAWAKI Takanori, IWAI Yoshio, INOUE Masataka
itemdescription
TitleStructural stability of ultrathin InAs/GaAs quantum wells grown by migration enhanced epitaxy
AuthorsYANO Mitsuaki, YOH Kanji, IWAWAKI Takanori, IWAI Yoshio, INOUE Masataka
Data nameJournal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy
Volume111
Num1-4
Page397-401
Year1991
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199108530
DOI10.1016/0022-0248(91)91008-X
@idhttps://gbank.gsj.jp/ld/resource/geolis/199108530