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Metalorganic molecular beam epitaxy of GaAs using hydrogen radical beam
WATANABE Akiyoshi, HATA Masayuki, ISU Toshiro
itemdescription
TitleMetalorganic molecular beam epitaxy of GaAs using hydrogen radical beam
AuthorsWATANABE Akiyoshi, HATA Masayuki, ISU Toshiro
Data nameJournal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy
Volume111
Num1-4
Page554-558
Year1991
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199108097
DOI10.1016/0022-0248(91)91038-C
@idhttps://gbank.gsj.jp/ld/resource/geolis/199108097