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GaInAs/InP MQW and DBR growth for surface emitting lasers by CBE
UCHIDA T.K., UCHIDA T., MISE K., YOKOUCHI N., KOYAMA F., IGA K.
itemdescription
TitleGaInAs/InP MQW and DBR growth for surface emitting lasers by CBE
AuthorsUCHIDA T.K., UCHIDA T., MISE K., YOKOUCHI N., KOYAMA F., IGA K.
Data nameJournal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy
Volume111
Num1-4
Page1062-1065
Year1991
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
DOI10.1016/0022-0248(91)91133-U
@idhttps://gbank.gsj.jp/ld/resource/geolis/199107830