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Si doping and MBE growth of GaAs on tilted (111)A substrates
SHIGETA M., OKANO Y., SETO H., KATAHAMA H., NISHINE S., KOBAYASHI K.
itemdescription
TitleSi doping and MBE growth of GaAs on tilted (111)A substrates
AuthorsSHIGETA M., OKANO Y., SETO H., KATAHAMA H., NISHINE S., KOBAYASHI K.
Data nameJournal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy
Volume111
Num1-4
Page284-287
Year1991
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
DOI10.1016/0022-0248(91)90986-F
@idhttps://gbank.gsj.jp/ld/resource/geolis/199106318