Geological Literature
Background pressure dependence of GaAs and AlGaAs growth rates in gas-source molecular beam epitaxy
SAITO Junji, MAEDA Takeshi, ONO Katsuji, KONDO Kazuo
| item | description |
|---|---|
| Title | Background pressure dependence of GaAs and AlGaAs growth rates in gas-source molecular beam epitaxy |
| Authors | SAITO Junji, MAEDA Takeshi, ONO Katsuji, KONDO Kazuo |
| Data name | Journal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy |
| Volume | 111 |
| Num | 1-4 |
| Page | 544-549 |
| Year | 1991 |
| Publisher | North-Holland |
| Language | EN |
| Abstract language | EN |
| ISSN | 00220248 |
| GEOLIS URL | https://darc.gsj.jp/archives/detail?cls=geolis&pkey=199105725 |
| DOI | 10.1016/0022-0248(91)91036-A |
| @id | https://gbank.gsj.jp/ld/resource/geolis/199105725 |