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Abruptness of GaAs/AlInP hetero-interfaces grown by GS-MBE
NAGAO S., TAKASHIMA M., INOUE Y., KATOH M., GOTOH H.
itemdescription
TitleAbruptness of GaAs/AlInP hetero-interfaces grown by GS-MBE
AuthorsNAGAO S., TAKASHIMA M., INOUE Y., KATOH M., GOTOH H.
Data nameJournal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy
Volume111
Num1-4
Page521-524
Year1991
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
DOI10.1016/0022-0248(91)91032-6
@idhttps://gbank.gsj.jp/ld/resource/geolis/199104420