Geological Literature
Residual impurities originating from AsH3 in GS-MBE grown GaAs
NAGAO S., INOUE Y., KAWANISHI E., GOTOH H.
| item | description |
|---|---|
| Title | Residual impurities originating from AsH3 in GS-MBE grown GaAs |
| Authors | NAGAO S., INOUE Y., KAWANISHI E., GOTOH H. |
| Data name | Journal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy |
| Volume | 111 |
| Num | 1-4 |
| Page | 511-514 |
| Year | 1991 |
| Publisher | North-Holland |
| Language | EN |
| Abstract language | EN |
| ISSN | 00220248 |
| DOI | 10.1016/0022-0248(91)91030-E |
| @id | https://gbank.gsj.jp/ld/resource/geolis/199104419 |