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Observation of dark line defects in InGaAs/GaAs strained layer superlattices by photoluminescence topography
IIZUKA Kanji, YOSHIDA Takashi, SUZUKI Toshimasa, HIROSE Haruo
itemdescription
TitleObservation of dark line defects in InGaAs/GaAs strained layer superlattices by photoluminescence topography
AuthorsIIZUKA Kanji, YOSHIDA Takashi, SUZUKI Toshimasa, HIROSE Haruo
Data nameJournal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy
Volume111
Num1-4
Page429-433
Year1991
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199101502
DOI10.1016/0022-0248(91)91014-2
@idhttps://gbank.gsj.jp/ld/resource/geolis/199101502