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Strain induced change in band offsets at pseudomorphically grown InAs/GaAs heterointerfaces characterized by X-ray photoelectron spectroscopy
HASHIMOTO Y., HIRAKAWA K., HARADA K., IKOMA T.
itemdescription
TitleStrain induced change in band offsets at pseudomorphically grown InAs/GaAs heterointerfaces characterized by X-ray photoelectron spectroscopy
AuthorsHASHIMOTO Y., HIRAKAWA K., HARADA K., IKOMA T.
Data nameJournal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy
Volume111
Num1-4
Page393-396
Year1991
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199101023
DOI10.1016/0022-0248(91)91007-W
@idhttps://gbank.gsj.jp/ld/resource/geolis/199101023