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Transport properties of p-Si/SiGe single-modulation-doped heterostructures grown by MBE
GRAVESTEIJN D.J., MISHIMA T., FREDRIKSZ C.W., VAN DE WALLE G.F.A., VAN DEN HEUVEL R.A.
itemdescription
TitleTransport properties of p-Si/SiGe single-modulation-doped heterostructures grown by MBE
AuthorsGRAVESTEIJN D.J., MISHIMA T., FREDRIKSZ C.W., VAN DE WALLE G.F.A., VAN DEN HEUVEL R.A.
Data nameJournal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy
Volume111
Num1-4
Page916-919
Year1991
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199100829
DOI10.1016/0022-0248(91)91107-L
@idhttps://gbank.gsj.jp/ld/resource/geolis/199100829