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Limitations of selective epitaxial growth conditions in gas-source MBE using Si2H6
AKETAGAWA Ken-ichi, TATSUMI Toru, SAKAI Junro
itemdescription
TitleLimitations of selective epitaxial growth conditions in gas-source MBE using Si2H6
AuthorsAKETAGAWA Ken-ichi, TATSUMI Toru, SAKAI Junro
Data nameJournal of Crystal Growth, Molecular Beam Epitaxy 1990, Proceedings of the Sixth International Conference on Molecular Beam Epitaxy
Volume111
Num1-4
Page860-863
Year1991
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
DOI10.1016/0022-0248(91)91097-T
@idhttps://gbank.gsj.jp/ld/resource/geolis/199100085