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Atomic Level Control in Gas Source MBE Growth of Cubic SiC
YOSHINOBU Tatsuo, NAKAYAMA Michiaki, SHIOMI Hiromu, FUYUKI Takashi, MATSUNAMI Hiroyuki
itemdescription
TitleAtomic Level Control in Gas Source MBE Growth of Cubic SiC
AuthorsYOSHINOBU Tatsuo, NAKAYAMA Michiaki, SHIOMI Hiromu, FUYUKI Takashi, MATSUNAMI Hiroyuki
Data nameJournal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth
Volume99
Num1-4
Page520-524
Year1990
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
DOI10.1016/0022-0248(90)90575-6
@idhttps://gbank.gsj.jp/ld/resource/geolis/199006870