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Heteroepitaxy of GaP-AlxGa1-xP System by the Temperature Difference Method under Controlled Vapor Pressure (TDM-CVP)
SUTO Ken, KIMURA Tomoyuki, OGASAWARA Shigemasa, NISHIZAW Jun-ichi
itemdescription
TitleHeteroepitaxy of GaP-AlxGa1-xP System by the Temperature Difference Method under Controlled Vapor Pressure (TDM-CVP)
AuthorsSUTO Ken, KIMURA Tomoyuki, OGASAWARA Shigemasa, NISHIZAW Jun-ichi
Data nameJournal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth
Volume99
Num1-4
Page297-301
Year1990
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199005267
DOI10.1016/0022-0248(90)90531-O
@idhttps://gbank.gsj.jp/ld/resource/geolis/199005267