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Strain-Induced Splitting of Free Exciton Band in Epitaxially Grown ZnSe on GaAs
SAITO H., OHISHI M., WATANABE A., OHMORI K.
itemdescription
TitleStrain-Induced Splitting of Free Exciton Band in Epitaxially Grown ZnSe on GaAs
AuthorsSAITO H., OHISHI M., WATANABE A., OHMORI K.
Data nameJournal of Crystal Growth, II-VI Compounds 1989, Proceedings of the Fourth International Conference on II-VI Compounds
Volume101
Num1-4
Page727-730
Year1990
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199004544
DOI10.1016/0022-0248(90)91068-2
@idhttps://gbank.gsj.jp/ld/resource/geolis/199004544