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InP-Insulator Interface Structure Studied by High Resolution Transmission Electron Microscopy
NOZAKI C., YASUAMI S., ISHIMURA H., TOKUDA H.
itemdescription
TitleInP-Insulator Interface Structure Studied by High Resolution Transmission Electron Microscopy
AuthorsNOZAKI C., YASUAMI S., ISHIMURA H., TOKUDA H.
Data nameJournal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth
Volume99
Num1-4
Page371-374
Year1990
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199003987
DOI10.1016/0022-0248(90)90546-W
@idhttps://gbank.gsj.jp/ld/resource/geolis/199003987