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LPE Growth of InP and InGaAs on MQW Layers below 500 degrees C
NISHIYAMA S., TAKENAKA C., KUSUNOKI T., FUJII T., NAKAJIMA K.
itemdescription
TitleLPE Growth of InP and InGaAs on MQW Layers below 500 degrees C
AuthorsNISHIYAMA S., TAKENAKA C., KUSUNOKI T., FUJII T., NAKAJIMA K.
Data nameJournal of Crystal Growth
Volume104
Num4
Page809-814
Year1990
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199003878
DOI10.1016/0022-0248(90)90106-U
@idhttps://gbank.gsj.jp/ld/resource/geolis/199003878