Geological Literature
Growth of Single Crystal GaN Substrate Using Hydride Vapor Phase Epitaxy
NANIWAE Kouichi, ITOH Shigetoshi, AMANO Hiroshi, ITOH Kenji, HIRAMATSU Kazumasa
| item | description |
|---|---|
| Title | Growth of Single Crystal GaN Substrate Using Hydride Vapor Phase Epitaxy |
| Authors | NANIWAE Kouichi, ITOH Shigetoshi, AMANO Hiroshi, ITOH Kenji, HIRAMATSU Kazumasa |
| Data name | Journal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth |
| Volume | 99 |
| Num | 1-4 |
| Page | 381-384 |
| Year | 1990 |
| Publisher | North-Holland |
| Language | EN |
| Abstract language | EN |
| ISSN | 00220248 |
| DOI | 10.1016/0022-0248(90)90548-Y |
| @id | https://gbank.gsj.jp/ld/resource/geolis/199003734 |