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Characterization of GaAsSb/InAlAs Quantum-Well Structures Lattice-Matched to InP Grown by Molecular Beam Epitaxy
NAKATA Yoshiaki, SUGIYAMA Yoshihiro, UEDA Osamu, SASA Shigehiko, FUJII Toshio, MIYAUCHI Eizo
itemdescription
TitleCharacterization of GaAsSb/InAlAs Quantum-Well Structures Lattice-Matched to InP Grown by Molecular Beam Epitaxy
AuthorsNAKATA Yoshiaki, SUGIYAMA Yoshihiro, UEDA Osamu, SASA Shigehiko, FUJII Toshio, MIYAUCHI Eizo
Data nameJournal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth
Volume99
Num1-4
Page311-314
Year1990
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199003704
DOI10.1016/0022-0248(90)90534-R
@idhttps://gbank.gsj.jp/ld/resource/geolis/199003704