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Silicon Deposition on Si(111) Surfaces at Room Temperature and Effects of Annealing
NAKAHARA Hitoshi, ICHIMIYA Ayahiko
itemdescription
TitleSilicon Deposition on Si(111) Surfaces at Room Temperature and Effects of Annealing
AuthorsNAKAHARA Hitoshi, ICHIMIYA Ayahiko
Data nameJournal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth
Volume99
Num1-4
Page514-519
Year1990
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199003549
DOI10.1016/0022-0248(90)90574-5
@idhttps://gbank.gsj.jp/ld/resource/geolis/199003549