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Atomic Layer Epitaxy of GaAsP and InAsP by Halogen System
KOUKITU Akinori, SAEGUSA Akihiko, SEKI Hisashi
itemdescription
TitleAtomic Layer Epitaxy of GaAsP and InAsP by Halogen System
AuthorsKOUKITU Akinori, SAEGUSA Akihiko, SEKI Hisashi
Data nameJournal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth
Volume99
Num1-4
Page556-559
Year1990
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199002533
DOI10.1016/0022-0248(90)90582-6
@idhttps://gbank.gsj.jp/ld/resource/geolis/199002533