Geological Literature
Atomic Layer Epitaxy of GaAsP and InAsP by Halogen System
KOUKITU Akinori, SAEGUSA Akihiko, SEKI Hisashi
item | description |
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Title | Atomic Layer Epitaxy of GaAsP and InAsP by Halogen System |
Authors | KOUKITU Akinori, SAEGUSA Akihiko, SEKI Hisashi |
Data name | Journal of Crystal Growth, Crystal Growth 1989, Part 1, Proceedings of the Ninth International Conference on Crystal Growth |
Volume | 99 |
Num | 1-4 |
Page | 556-559 |
Year | 1990 |
Publisher | North-Holland |
Language | EN |
Abstract language | EN |
ISSN | 00220248 |
GEOLIS URL | https://darc.gsj.jp/archives/detail?cls=geolis&pkey=199002533 |
DOI | 10.1016/0022-0248(90)90582-6 |
@id | https://gbank.gsj.jp/ld/resource/geolis/199002533 |