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Carbon-Doped GaAs Grown by Metalorganic Vapor Phase Epitaxy Using TMAs and TEG
KOBAYASHI T., INOUE N.
itemdescription
TitleCarbon-Doped GaAs Grown by Metalorganic Vapor Phase Epitaxy Using TMAs and TEG
AuthorsKOBAYASHI T., INOUE N.
Data nameJournal of Crystal Growth
Volume102
Num1-2
Page183-186
Year1990
PublisherNorth-Holland
LanguageEN
Abstract languageEN
ISSN00220248
GEOLIS URLhttps://darc.gsj.jp/archives/detail?cls=geolis&pkey=199002338
DOI10.1016/0022-0248(90)90900-6
@idhttps://gbank.gsj.jp/ld/resource/geolis/199002338